issue 5 - august 2005 1 www.zetex.com ? zetex semiconductors plc 2005 fmmt459 500v silicon npn high voltage switching transistor summary v (br)cev > 500v v (br)ecv > 6v i c(cont) = 150 ma v ce(sat) = 70 mv @ 50 ma description this new high voltage transistor provides users with very efficient performance, combining low v ce(sat) high hfe to give extremely low on state losses at 500v operation, making it ideal for use in high efficiency telecom and prot ected line switch ing applications. features 6v reverse blocking capability low saturation voltage - 90mv @ 50ma hfe 50 @ 30 ma i c =150ma continuous sot23 package with ptot 625mw specification can be supplied in other package outlines applications electronic test equipment offline switching circuits piezo actuators rcd circuits ordering information device marking 459 device reel size (inches) tape width (mm) quantity per reel fmmt459ta 7 8 3,000 fmmt459tc 13 8 10,000 pin out - top view
fmmt459 issue 5 - august 2005 2 www.zetex.com ? zetex semiconductors plc 2005 absolute maximum ratings thermal resistance parameter symbol limit unit collector-base voltage v cbo 500 v collector-emitter voltage v cev 500 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 6v emitter-collector voltage v ecv 6v peak pulse current i cm 0.5 a continuous collector current * i c 0.15 a base current i b 0.2 a power dissipation @ t a =25c * linear derating factor p d 625 5 mw mw/c power dissipation @ t a =25c ? linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c parameter symbol value unit junction to ambient * notes: * for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of 1oz copper, in still air conditions r ja 200 c/w junction to ambient ? ? as above measured at t<5secs. r ja 155 c/w
fmmt459 issue 5 - august 2005 3 www.zetex.com ? zetex semiconductors plc 2005 thermal characteristics 100m 1 10 100 1m 10m 100m 1 single pulse t amb =25c 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 transient thermal im p edance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s)
fmmt459 issue 5 - august 2005 4 www.zetex.com ? zetex semiconductors plc 2005 electrical characteristics (at t amb = 25c unless otherwise stated) note: for high voltage applications, the approp riate industry sector guidelines should be considered with regards to vo ltage spacing between terminals. parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 500 700 v i c = 100 a collector-emitter breakdown voltage bv cev 500 700 v i c = 10 a, 0.3v > v be > -1v collector-emitter breakdown voltage bv ceo 450 500 v i c = 10ma * emitter-base breakdown voltage bv ebo 68.1 vi e = 100 a emitter-base breakdown voltage (reverse blocking) bv ecv 68.1 vi c = 1 a, 0.3v > v bc > -6v collector-emitter cut-off current i ces 100 na v ce =450v collector-base cut-off current i cbo 100 na v cb =450v emitter-base cut-off current i ebo 100 na v eb =5v static forward current transfer ratio h fe 50 120 70 i c = 30ma, v ce = 10v i c = 50ma * , v ce = 10v collector-emitter saturation voltage v ce(sat) 60 70 75 90 mv mv i c = 20ma, i b = 2ma * i c = 50ma, i b = 6ma * notes: * measured under pulsed conditions. pulse width = 300 s; duty cycle <2% base-emitter saturation voltage v be(sat) 0.76 0.9 v i c = 50ma, i b = 5ma * base-emitter turn-on voltage v be(on) 0.71 0.9 v i c = 50ma, v ce = 10v * transition frequency f t 50 mhz i c = 10ma, v ce = 20v f = 20mhz output capacitance c obo 5 p fv cb = 20v, f = 1mhz turn-on time t (on) 113 ns i c = 50ma, v c = 100v i b1 = 5ma, i b2 = 10ma turn-off time t (off) 3450 ns i c = 50ma, v c = 100v i b1 = 5ma, i b2 = 10ma
fmmt459 issue 5 - august 2005 5 www.zetex.com ? zetex semiconductors plc 2005 electrical characteristics 1m 10m 100m 10m 100m 1 1m 10m 100m 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1m 10m 100m 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 0.4 0.6 0.8 1.0 1m 10m 100m 0.4 0.6 0.8 1.0 0 30 60 90 120 150 180 210 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =20 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =10v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =20 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =10v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
fmmt459 issue 5 - august 2005 6 www.zetex.com ? zetex semiconductors plc 2005 these offices are supported by agents and di stributors in major countries world-wide. this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com packaging details - sot23 package dimensions dimensions in inches are control dimensions, dimensions in millimeters are approximate. dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom. 0.0375 nom. g 1.90 nom. 0.075 nom. - - - - - l n h g a c f b m k d 3 leads
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